1. Product Science and Structural Integrity
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms set up in a tetrahedral latticework, largely in hexagonal (4H, 6H) or cubic (3C) polytypes, each displaying phenomenal atomic bond toughness.
The Si– C bond, with a bond power of roughly 318 kJ/mol, is among the toughest in architectural porcelains, providing outstanding thermal security, solidity, and resistance to chemical attack.
This robust covalent network causes a material with a melting point going beyond 2700 ° C(sublimes), making it among the most refractory non-oxide porcelains available for high-temperature applications.
Unlike oxide porcelains such as alumina, SiC keeps mechanical toughness and creep resistance at temperature levels over 1400 ° C, where many steels and standard porcelains start to soften or deteriorate.
Its reduced coefficient of thermal growth (~ 4.0 × 10 ⁻⁶/ K) integrated with high thermal conductivity (80– 120 W/(m · K)) enables rapid thermal cycling without disastrous breaking, a critical feature for crucible performance.
These intrinsic buildings originate from the well balanced electronegativity and similar atomic sizes of silicon and carbon, which promote an extremely steady and largely loaded crystal framework.
1.2 Microstructure and Mechanical Strength
Silicon carbide crucibles are usually fabricated from sintered or reaction-bonded SiC powders, with microstructure playing a decisive role in resilience and thermal shock resistance.
Sintered SiC crucibles are created through solid-state or liquid-phase sintering at temperature levels over 2000 ° C, often with boron or carbon ingredients to enhance densification and grain limit communication.
This procedure yields a fully thick, fine-grained framework with marginal porosity (
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